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Abstract Magnetic topological materials have recently emerged as a promising platform for studying quantum geometry by the nonlinear transport in thin film devices. In this work, an antiferromagnetic (AFM) semiconductor EuSc₂Te₄ as the first bulk crystal that exhibits quantum geometry‐driven nonlinear transport is reported. This material crystallizes into an orthorhombic lattice with AFM order below 5.2 K and a bandgap of less than 50 meV. The calculated band structure aligns with the angle‐resolved photoemission spectroscopy spectrum. The AFM order preserves combined space‐time inversion symmetry but breaks both spatial inversion and time‐reversal symmetry, leading to the nonlinear Hall effect (NLHE). Nonlinear Hall voltage measured in bulk crystals appears at zero field, peaks near the spin‐flop transition as the field increases, and then diminishes as the spin moments align into a ferromagnetic order. This field dependence, along with the scaling analysis of the nonlinear Hall conductivity, suggests that the NLHE of EuSc₂Te₄ involves contributions from quantum metric, in addition to extrinsic contributions, such as spin scattering and junction effects. Furthermore, this NLHE is found to have the functionality of broadband frequency mixing, indicating its potential applications in electronics. This work reveals a new avenue for studying magnetism‐induced nonlinear transport in magnetic materials. 

Abstract Superior infrared nonlinear optical (NLO) crystals are in urgent demand in the development of lasers and optical technologies for communications and computing. The critical challenge is to find a crystal with large non‐resonant phase‐matchable NLO coefficients and high laser damage threshold (LDTs) simultaneously, which however scale inversely. This work reports such a material, MgSiP_2,that exhibits a large second harmonic generation (SHG) coefficient ofd₁₄≈d₃₆= 89 ± 5 pm V⁻¹at 1550 nm fundamental wavelength, surpassing the commercial NLO crystals AgGaS₂, AgGaSe₂, and ZnGeP₂. First principles theory reveals the polarizability and geometric arrangement of the [SiP₄] tetrahedral units as the origin of this large nonlinear response. Remarkably, it also exhibits a high LDT value of 684 GW cm⁻², which is six times larger than ZnGeP₂and three times larger than CdSiP₂. It has a wide transparency window of 0.53–10.35 µm, allowing broadband tunability. Further, it is Type I and Type II phase‐matchable with large effective SHG coefficients ofd_eff,I≈80.2 pm V⁻¹andd_eff,II≈73.4 pm V⁻¹. The outstanding properties of MgSiP₂make it a highly attractive candidate for optical frequency conversion in the infrared.